The IPD082N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IPD082N10N3G transistor as follows.
Transistor Code | IPD082N10N3G | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | DPAK_TO252 | |
Drain-Source Voltage (Maximum) | VDS | 100V |
Drain Current (Maximum) | ID | 80A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0082Ohm |
Power Dissipation (Maximum) | PD | 125W |
Total Gate Charge | 42nC |
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