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IPD068N10N3G MOSFET Transistor

The IPD068N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD068N10N3G transistor as follows.

Circuit diagram symbol of the IPD068N10N3G transistor

IPD068N10N3G Transistor Specification

Transistor Code IPD068N10N3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_TO252
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0068Ohm
Power Dissipation (Maximum) PD 150W
Total Gate Charge 51nC

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