IPD053N06N3G MOSFET Transistor

The IPD053N06N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD053N06N3G transistor as follows.

IPD053N06N3G Transistor Specification

Transistor Code		IPD053N06N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0053Ohm
Power Dissipation (Maximum)	PD	115W
Total Gate Charge		82nC

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