IPD053N06N MOSFET Transistor

The IPD053N06N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD053N06N transistor as follows.

IPD053N06N Transistor Specification

Transistor Code		IPD053N06N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		053N06N
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3.3V

UXPython is not the creator or an official representative of the IPD053N06N MOSFET transistor. You can download the official IPD053N06N MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRFR420B MOSFET Transistor CHM85A3PAGP MOSFET Transistor AOD492 MOSFET Transistor AP9972GH-HF MOSFET Transistor MTED6N25KJ3 MOSFET Transistor RU3089L MOSFET Transistor MTB08N04J3 MOSFET Transistor AOD482 MOSFET Transistor ST25N10 MOSFET Transistor APQ39SN04AB MOSFET Transistor CHM12N10PAGP MOSFET Transistor MDD1901RH MOSFET Transistor AM20N10-180D MOSFET Transistor MTB80N08J3 MOSFET Transistor AOD7N65 MOSFET Transistor RU2HE5L MOSFET Transistor MTB04N03J3 MOSFET Transistor QM6007D MOSFET Transistor UTT30P04 MOSFET Transistor MSD50N10 MOSFET Transistor