IPD048N06L3G MOSFET Transistor

The IPD048N06L3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD048N06L3G transistor as follows.

IPD048N06L3G Transistor Specification

Transistor Code		IPD048N06L3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0048Ohm
Power Dissipation (Maximum)	PD	115W
Total Gate Charge		37nC

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