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IPD038N04NG MOSFET Transistor

The IPD038N04NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD038N04NG transistor as follows.

Circuit diagram symbol of the IPD038N04NG transistor

IPD038N04NG Transistor Specification

Transistor Code IPD038N04NG
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_TO252
Drain-Source Voltage (Maximum) VDS 40V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0038Ohm
Power Dissipation (Maximum) PD 94W
Total Gate Charge 56nC

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