IPD031N06L3G MOSFET Transistor

The IPD031N06L3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD031N06L3G transistor as follows.

IPD031N06L3G Transistor Specification

Transistor Code		IPD031N06L3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0031Ohm
Power Dissipation (Maximum)	PD	167W
Total Gate Charge		59nC

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