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IPD031N03LG MOSFET Transistor

The IPD031N03LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD031N03LG transistor as follows.

Circuit diagram symbol of the IPD031N03LG transistor

IPD031N03LG Transistor Specification

Transistor Code IPD031N03LG
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_TO252
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0031Ohm
Power Dissipation (Maximum) PD 94W
Total Gate Charge 51nC

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