IPD031N03L MOSFET Transistor

The IPD031N03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD031N03L transistor as follows.

IPD031N03L Transistor Specification

Transistor Code		IPD031N03L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		031N03L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0031Ohm
Power Dissipation (Maximum)	PD	94W
Drain-Source Capacitance		1400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2.2V

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