IPD025N06N MOSFET Transistor

The IPD025N06N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD025N06N transistor as follows.

IPD025N06N Transistor Specification

Transistor Code		IPD025N06N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		025N06N
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	167W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		3.3V

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