IPB80N06S2L-H5 MOSFET Transistor

The IPB80N06S2L-H5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB80N06S2L-H5 transistor as follows.

IPB80N06S2L-H5 Transistor Specification

Transistor Code		IPB80N06S2L-H5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		190nC

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