The IPB77N06S2-12 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IPB77N06S2-12 transistor as follows.
Transistor Code | IPB77N06S2-12 | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | PGTO263 | |
Drain-Source Voltage (Maximum) | VDS | 55V |
Drain Current (Maximum) | ID | 77A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0117Ohm |
Power Dissipation (Maximum) | PD | 158W |
Total Gate Charge | 60nC |
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