IPB65R660CFDA MOSFET Transistor

The IPB65R660CFDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R660CFDA transistor as follows.

IPB65R660CFDA Transistor Specification

Transistor Code		IPB65R660CFDA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		65F660A
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.66Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		32pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4.5V

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