IPB65R420CFD MOSFET Transistor

The IPB65R420CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R420CFD transistor as follows.

IPB65R420CFD Transistor Specification

Transistor Code		IPB65R420CFD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		65F6420
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.42Ohm
Power Dissipation (Maximum)	PD	83.3W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		4.5V

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