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IPB65R310CFDA MOSFET Transistor

The IPB65R310CFDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R310CFDA transistor as follows.

Circuit diagram symbol of the IPB65R310CFDA transistor

IPB65R310CFDA Transistor Specification

Transistor Code IPB65R310CFDA
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Transistor SMD Code 65F6310A
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.31Ohm
Power Dissipation (Maximum) PD 104.2W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.5nS
Gate-Threshold Voltage (Maximum) 4.5V

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