IPB65R310CFD MOSFET Transistor

The IPB65R310CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R310CFD transistor as follows.

IPB65R310CFD Transistor Specification

Transistor Code		IPB65R310CFD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		65F6310
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.31Ohm
Power Dissipation (Maximum)	PD	104.2W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		4.5V

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