IPB65R280E6 MOSFET Transistor

The IPB65R280E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R280E6 transistor as follows.

IPB65R280E6 Transistor Specification

Transistor Code		IPB65R280E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	650V
Drain Current (Maximum)	ID	13.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	104W
Total Gate Charge		45nC

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