IPB65R190E6 MOSFET Transistor

The IPB65R190E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R190E6 transistor as follows.

IPB65R190E6 Transistor Specification

Transistor Code		IPB65R190E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		65E6190
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	151W
Drain-Source Capacitance		98pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		3.5V

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