IPB65R190CFDA MOSFET Transistor

The IPB65R190CFDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R190CFDA transistor as follows.

IPB65R190CFDA Transistor Specification

Transistor Code		IPB65R190CFDA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		65F6190A
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	151W
Drain-Source Capacitance		86pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.4nS
Gate-Threshold Voltage (Maximum)		4.5V

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