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IPB65R150CFD MOSFET Transistor

The IPB65R150CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB65R150CFD transistor as follows.

Circuit diagram symbol of the IPB65R150CFD transistor

IPB65R150CFD Transistor Specification

Transistor Code IPB65R150CFD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Transistor SMD Code 65F6150
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 22.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 195.3W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.6nS
Gate-Threshold Voltage (Maximum) 4.5V

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