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IPB60R950C6 MOSFET Transistor

The IPB60R950C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB60R950C6 transistor as follows.

Circuit diagram symbol of the IPB60R950C6 transistor

IPB60R950C6 Transistor Specification

Transistor Code IPB60R950C6
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.95Ohm
Power Dissipation (Maximum) PD 37W

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