IPB60R600CP MOSFET Transistor

The IPB60R600CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB60R600CP transistor as follows.

IPB60R600CP Transistor Specification

Transistor Code		IPB60R600CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	6.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	60W
Total Gate Charge		21nC

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