IPB60R199CPA MOSFET Transistor

The IPB60R199CPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB60R199CPA transistor as follows.

IPB60R199CPA Transistor Specification

Transistor Code		IPB60R199CPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO263
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.199Ohm
Power Dissipation (Maximum)	PD	139W

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