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IPB60R199CP MOSFET Transistor

The IPB60R199CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB60R199CP transistor as follows.

Circuit diagram symbol of the IPB60R199CP transistor

IPB60R199CP Transistor Specification

Transistor Code IPB60R199CP
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.199Ohm
Power Dissipation (Maximum) PD 139W
Total Gate Charge 32nC

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