IPB260N06N3G MOSFET Transistor

The IPB260N06N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB260N06N3G transistor as follows.

IPB260N06N3G Transistor Specification

Transistor Code		IPB260N06N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	36W

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