IPB180N04S4-H0 MOSFET Transistor

The IPB180N04S4-H0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB180N04S4-H0 transistor as follows.

IPB180N04S4-H0 Transistor Specification

Transistor Code		IPB180N04S4-H0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO263
Drain-Source Voltage (Maximum)	VDS	40V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0011Ohm
Power Dissipation (Maximum)	PD	250W
Total Gate Charge		225nC

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