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IPB160N04S2L-03 MOSFET Transistor

The IPB160N04S2L-03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB160N04S2L-03 transistor as follows.

Circuit diagram symbol of the IPB160N04S2L-03 transistor

IPB160N04S2L-03 Transistor Specification

Transistor Code IPB160N04S2L-03
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO263
Drain-Source Voltage (Maximum) VDS 40V
Drain Current (Maximum) ID 160A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0027Ohm
Power Dissipation (Maximum) PD 300W
Total Gate Charge 230nC

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