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IPB123N10N3G MOSFET Transistor

The IPB123N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB123N10N3G transistor as follows.

Circuit diagram symbol of the IPB123N10N3G transistor

IPB123N10N3G Transistor Specification

Transistor Code IPB123N10N3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 58A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0123Ohm
Power Dissipation (Maximum) PD 94W
Total Gate Charge 26nC

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