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IPB120N04S3-02 MOSFET Transistor

The IPB120N04S3-02 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB120N04S3-02 transistor as follows.

Circuit diagram symbol of the IPB120N04S3-02 transistor

IPB120N04S3-02 Transistor Specification

Transistor Code IPB120N04S3-02
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO263
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 210nC

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