IPB114N03LG MOSFET Transistor

The IPB114N03LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB114N03LG transistor as follows.

IPB114N03LG Transistor Specification

Transistor Code		IPB114N03LG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0114Ohm
Power Dissipation (Maximum)	PD	38W

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