The IPB100N08S2L-07 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IPB100N08S2L-07 transistor as follows.
| Transistor Code | IPB100N08S2L-07 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | PTO263 | |
| Drain-Source Voltage (Maximum) | VDS | 75V |
| Drain Current (Maximum) | ID | 100A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0065Ohm |
| Power Dissipation (Maximum) | PD | 300W |
| Total Gate Charge | 246nC | |
UXPython is not the creator or an official representative of the IPB100N08S2L-07 MOSFET transistor. You can download the official IPB100N08S2L-07 MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
SPB70N10L MOSFET Transistor
IPB80N08S2L-07 MOSFET Transistor
IPB100N08S2-07 MOSFET Transistor
IPB15N03L MOSFET Transistor
IPB80N08S2-07 MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.