IPB085N06LG MOSFET Transistor

The IPB085N06LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB085N06LG transistor as follows.

IPB085N06LG Transistor Specification

Transistor Code		IPB085N06LG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		085N06L
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		620pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2V

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