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IPB085N06LG MOSFET Transistor

The IPB085N06LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB085N06LG transistor as follows.

Circuit diagram symbol of the IPB085N06LG transistor

IPB085N06LG Transistor Specification

Transistor Code IPB085N06LG
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Transistor SMD Code 085N06L
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0082Ohm
Power Dissipation (Maximum) PD 188W
Drain-Source Capacitance 620pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 2V

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