IPB081N06L3G MOSFET Transistor

The IPB081N06L3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB081N06L3G transistor as follows.

IPB081N06L3G Transistor Specification

Transistor Code		IPB081N06L3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0084Ohm
Power Dissipation (Maximum)	PD	79W
Total Gate Charge		22nC

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