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IPB067N08N3G MOSFET Transistor

The IPB067N08N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB067N08N3G transistor as follows.

Circuit diagram symbol of the IPB067N08N3G transistor

IPB067N08N3G Transistor Specification

Transistor Code IPB067N08N3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 80V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0067Ohm
Power Dissipation (Maximum) PD 136W
Total Gate Charge 42nC

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