IPB065N06LG MOSFET Transistor

The IPB065N06LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB065N06LG transistor as follows.

IPB065N06LG Transistor Specification

Transistor Code		IPB065N06LG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0062Ohm
Power Dissipation (Maximum)	PD	250W

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