IPB05N03LBG MOSFET Transistor

The IPB05N03LBG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB05N03LBG transistor as follows.

IPB05N03LBG Transistor Specification

Transistor Code		IPB05N03LBG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		05N03LB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	94W
Drain-Source Capacitance		859pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2V

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