IPB05N03LA MOSFET Transistor

The IPB05N03LA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB05N03LA transistor as follows.

IPB05N03LA Transistor Specification

Transistor Code		IPB05N03LA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		05N03LA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0046Ohm
Power Dissipation (Maximum)	PD	94W
Drain-Source Capacitance		921pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		2V

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