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IPB057N06N MOSFET Transistor

The IPB057N06N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB057N06N transistor as follows.

Circuit diagram symbol of the IPB057N06N transistor

IPB057N06N Transistor Specification

Transistor Code IPB057N06N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Transistor SMD Code 057N06N
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 45A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0057Ohm
Power Dissipation (Maximum) PD 83W
Drain-Source Capacitance 490pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 3.3V

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