IPB051NE8NG MOSFET Transistor

The IPB051NE8NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB051NE8NG transistor as follows.

IPB051NE8NG Transistor Specification

Transistor Code		IPB051NE8NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	85V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0051Ohm
Power Dissipation (Maximum)	PD	300W

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