IPB04N03LAT MOSFET Transistor

The IPB04N03LAT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB04N03LAT transistor as follows.

IPB04N03LAT Transistor Specification

Transistor Code		IPB04N03LAT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		04N03LA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		1236pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		2V

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