IPB04CN10NG MOSFET Transistor

The IPB04CN10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB04CN10NG transistor as follows.

IPB04CN10NG Transistor Specification

Transistor Code		IPB04CN10NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		04CN10N
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1590pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		78nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		158nC

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