IPB049NE7N3G MOSFET Transistor

The IPB049NE7N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB049NE7N3G transistor as follows.

IPB049NE7N3G Transistor Specification

Transistor Code		IPB049NE7N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	75V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0049Ohm
Power Dissipation (Maximum)	PD	150W
Total Gate Charge		51nC

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