IPB049N08N5 MOSFET Transistor

The IPB049N08N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB049N08N5 transistor as follows.

IPB049N08N5 Transistor Specification

Transistor Code		IPB049N08N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		049N08N5
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0049Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3.8V

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