IPB042N10N3GE8187 MOSFET Transistor

The IPB042N10N3GE8187 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB042N10N3GE8187 transistor as follows.

IPB042N10N3GE8187 Transistor Specification

Transistor Code		IPB042N10N3GE8187
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		042N10N
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		1210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		117nC

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