The IPB039N10N3GE8187 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IPB039N10N3GE8187 transistor as follows.
| Transistor Code | IPB039N10N3GE8187 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-263-7 | |
| Transistor SMD Code | 039N10N | |
| Drain-Source Voltage (Maximum) | VDS | 100V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 160A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0039Ohm |
| Power Dissipation (Maximum) | PD | 214W |
| Drain-Source Capacitance | 1210pF | |
| Operating Junction Temperature (Maximum) | 175°C | |
| Rise Time | 59nS | |
| Gate-Threshold Voltage (Maximum) | 3.5V | |
| Total Gate Charge | 117nC | |
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