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IPB039N10N3G MOSFET Transistor

The IPB039N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB039N10N3G transistor as follows.

Circuit diagram symbol of the IPB039N10N3G transistor

IPB039N10N3G Transistor Specification

Transistor Code IPB039N10N3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 160A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0039Ohm
Power Dissipation (Maximum) PD 214W
Total Gate Charge 88nC

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