IPB038N12N3G MOSFET Transistor

The IPB038N12N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB038N12N3G transistor as follows.

IPB038N12N3G Transistor Specification

Transistor Code		IPB038N12N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	120V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		158nC

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