IPB027N10N5 MOSFET Transistor

The IPB027N10N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB027N10N5 transistor as follows.

IPB027N10N5 Transistor Specification

Transistor Code		IPB027N10N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		027N10N5
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0027Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3.8V
Total Gate Charge		112nC

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