IPB026N06N MOSFET Transistor

The IPB026N06N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB026N06N transistor as follows.

IPB026N06N Transistor Specification

Transistor Code		IPB026N06N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		026N06N
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	136W
Drain-Source Capacitance		980pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3.3V

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