IPB023N06N3G MOSFET Transistor

The IPB023N06N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB023N06N3G transistor as follows.

IPB023N06N3G Transistor Specification

Transistor Code		IPB023N06N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	140A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0023Ohm
Power Dissipation (Maximum)	PD	214W
Total Gate Charge		198nC

UXPython is not the creator or an official representative of the IPB023N06N3G MOSFET transistor. You can download the official IPB023N06N3G MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IPB051NE8NG MOSFET Transistor IPB029N06N3G MOSFET Transistor SPB12N50C3 MOSFET Transistor IPB60R190C6 MOSFET Transistor IPB60R125C6 MOSFET Transistor IPB030N08N3G MOSFET Transistor IPB79CN10NG MOSFET Transistor IPB65R600C6 MOSFET Transistor IPB05CN10NG MOSFET Transistor IPB12CNE8NG MOSFET Transistor IPB054N06N3G MOSFET Transistor IPB031NE7N3G MOSFET Transistor BUZ30AH3045A MOSFET Transistor IPB60R160C6 MOSFET Transistor IPB530N15N3G MOSFET Transistor IPB123N10N3G MOSFET Transistor IPB230N06L3G MOSFET Transistor IPB037N06N3G MOSFET Transistor IPB60R099C6 MOSFET Transistor IPB08CNE8NG MOSFET Transistor